As a leading enterprise in the field of semiconductor heterogeneous integration technology, iSABers Semiconductor Technology Co., Ltd. recently announced the successful development of an 8-inch Obsidian-Piezoelectric on Insulator (Obsidian-POI) substrate for high-performance filters. This achievement not only highlights iSABers’ profound expertise in advanced semiconductor material heterogeneous integration but also propels China’s technological capabilities in this field to the international forefront .

8-inch Obsidian-POI Substrate for High-Performance Filters

The Obsidian-POI (Piezoelectric on Insulator) substrate is a novel material combining the superior properties of piezoelectric materials (e.g., lithium niobate, lithium tantalate) with the stability of insulating layers . This design enables excellent thermal compensation and high-frequency performance, making it ideal for critical electronic devices such as high-performance filters, sensors, and 5G front-end modules .


Through relentless R&D efforts, iSABers has mastered the core production technology of Obsidian-POI substrates, achieving large-scale manufacturing of 8-inch versions with industry-leading uniformity and reliability. The substrate’s structure—comprising a piezoelectric layer (e.g., LiNbO₃/LiTaO₃), buried oxide layer, and silicon support substrate—addresses the stringent requirements of next-generation wireless communication systems, including low insertion loss (<1 dB), high quality factor (Q > 1,000), and wide bandwidth (up to 3+ GHz) .

Committed to its corporate philosophy of "Integrate Innovation, Break Boundaries", iSABers will continue investing in R&D to develop next-generation piezoelectric-on-insulator materials (e.g., AlN-based POI) and expand its product portfolio to include 12-inch wafers. By fostering collaboration with academic institutions and industry partners, the company aims to accelerate commercialization of Obsidian-POI substrates and contribute to China’s semiconductor industry leadership in heterogeneous integration .