Equipment Features
-
- High Process Compatibility
- Supports wafers up to 12 inches. Optional anodic bonding function compatible with upstream alignment/photolithography systems.
-
- Precision Temperature & Pressure Control
- Temperature uniformity ±1.2%, pressure control accuracy ≤±1%, and pressure uniformity ≤3%.
-
- Hydrogen Radical Activation Support
- Hydrogen radicals enable low-temperature reduction (at 180°C) for metal surfaces (e.g., Cu), reducing bonding temperature and enhancing quality.
Specifications and Parameters
-
ltemsSpecification
-
Wafer size2-12 inch
-
Bondable materialsSi, Cu, Au, Au-Sn, Al-Ge, etc.
-
Maximum temp.550℃
-
Maximum pressure100kN，accuracy ≤±1%
-
Heating rate30℃/min
-
Temp. uniformity±1.2% or ±2℃，take the larger value
-
pressure uniformity±3% or ±40N，take the larger value
-
Anodic voltage/current≤2kV，≤100mA
-
Post-bonding accuracy≤5μm，≤2μm
-
Bonding atmosphereVaccum, Formic acid, Inert gas(optional)
