Equipment Features
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- Full-Size High-Volume Production
- Compatible with 6-12 inch wafers. Integrates edge alignment, plasma activation, cleaning, and bonding modules, achieving a throughput of 14 WPH.
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- Optional Cavity Fusion Bonding
- After high-precision alignment, wafers are fixed on chucks and transferred to a vacuum chamber for bonding, with bonding accuracy ≤±0.5 μm.
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- Exceptional Bonding Yield
- Upgraded plasma activation, megasonic/two-fluid cleaning technologies, and bond wave propagation control eliminate bonding voids and enhance yield.
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- Intelligent Defect Recognition
- Smart algorithms precisely identify bonding defects (e.g., voids). Defective wafers can be debonded and reused.
Specifications and Parameters
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ltemsSpecification
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Wafer size6、8、12 inch
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CapacitySOI、POI
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Capacity≥14 pairs/h
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Wafer loadCassette、SMIF、Foup Optional
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Alignment accuracyMechanical alignment: ≤ ±50μm；Optical≤±0.5μm（Cavity bonding）
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Bond strength≥2.0J/m² (Si-SiO2, after annealing)
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Multi-module integratedPre-align, plasma activation, clean, align, bond, detection,debonding
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Chemical cleanOptional
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MicroenvironmentFFU control, capable of achieving ISO Class 1
