Features
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- Full-size & Irregular Shape Wafers Compatibility
- Accommodates bonding requirements for samples of varying dimensions, including irregular shapes.
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- Cold Pump for Rapid UHV
- Integrates a cold pump for fast UHV evacuation, reducing moisture-induced bonding defects.
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- Ion Beam Activation & In-Situ Sputtering
- Combines ion beam surface cleaning (oxide/contaminant removal) with in-situ nanoscale sputter deposition.
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- Face-Down Bonding for Particle Control
- Bonding surfaces face downward to minimize particle contamination.
Specifications
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ltemsSpecification
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Wafer size≤12inch,compatible with irregular shapes
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Bondable materialsSi, LT/LN, Sapphire, InP, SiC, GaAs, GaN, Diamond, Glass etc.
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Wafer loadManual
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Maximum pressure80kN
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Surface treatmentIn-situ activation and sputtering deposition
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Sputtering targets≥3,rotatable
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Bond strength2.5J/m²@room temperature(Si-Si,Glass-Glass)
