Equipment Features
-
- Full-Wafer & Irregular Sample Compatibility
- Accommodates bonding requirements for samples of varying dimensions, including irregular shapes.
-
- Cold Pump for Rapid UHV
- Integrates a cold pump for fast UHV evacuation, reducing moisture-induced bonding defects.
-
- on Beam Activation & In-Situ Sputtering
- Combines ion beam surface cleaning (oxide/contaminant removal) with in-situ nanoscale sputter deposition.
-
- Face-Down Bonding for Particle Control
- Bonding surfaces face downward to minimize particle contamination.
Specifications and Parameters
-
ltemsSpecification
-
Wafer size≤12inch,compatible with irregular shapes
-
Bondable materialsSi, LT/LN, Sapphire, InP, SiC, GaAs, GaN, Diamond, Glass etc.
-
Wafer loadManual
-
Maximum pressure80kN
-
Surface treatmentIn-situ activation and sputtering deposition
-
Sputtering targets≥3,rotatable
-
Bond strength2.5J/m²@room temperature(Si-Si,Glass-Glass)
