Equipment Features
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- High-Efficiency Automated Handling
- Supports multiple loading methods (Cassette, custom FOUP, or EFEM) with high-precision robotics and 180° wafer flipping. ESC chucking ensures stable transfer.
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- Ultra-High Performance Vacuum System
- Achieves ≤9.0E-6Pa in cluster/baking/activation/sputtering chambers and ≤5.0E-6Pa in bonding chamber. Fast pump-down (≤3min) and venting (≤1min) enable high throughput and stable processing.
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- Precision Alignment & Force Control
- Integrated edge-finding alignment (≤±0.2° angular, ≤±0.1mm positional) with 100KN max bonding force. Force control maintains ≤±0.5% accuracy and ≤±5% uniformity for consistent bonding.
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- High-Speed Activation & Mass Production Capability
- Activation etch rate ≥15nm/min with ≤0.1nm added roughness. Throughput ≥12 WPH with integrated baking for rapid moisture removal, meeting high-volume production demands.
Specifications and Parameters
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ltemsSpecification
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Wafer size2-12 inch
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Bondable materialsSi, LT/LN, Sapphire, InP, SiC, GaAs, GaN, as well as metals, glass, etc.
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Capacity≥12 pairs/h
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Wafer loadCassette
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Maximum pressure100kN
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Sputtering target≥2, rotatable
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Alignment accuracy≤±50μm@edge alignment;≤±2μm@mark alignment
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LayoutCluster tool
