Features
-
- High-efficiency Automated Loading
- Supports multiple loading methods (standard/customized cassette or EFEM) with high-precision robotics and 180° wafer flipper. ESC chucking ensures stable transfer.
-
- Ultra-high Performance Vacuum System
- Achieves ≤9.0E-6Pa in cluster/baking/activation/sputtering chambers and ≤5.0E-6Pa in bonding chamber. Fast pump-down (≤3min) and venting (≤1min) of LC chamber enable high throughput and stable processing.
-
- Precision Alignment & Force Control
- Integrates edge-finding alignment (≤±0.2° angular, ≤±0.1mm positional). Force control maintains 100kN max bonding force, ≤±0.5% accuracy and ≤±5% uniformity for consistent bonding.
-
- High-efficiency Activation & Mass Production Capability
- Activation etch rate ≥15nm/min with ≤0.1nm roughness increase. Throughput ≥12 WPH with integrated baking for rapid moisture removal, meeting high-volume production demands.
Specifications
-
ltemsSpecification
-
Wafer size2-12 inch
-
Bondable materialsSi, LT/LN, Sapphire, InP, SiC, GaAs, GaN, as well as metals, glass, etc.
-
Capacity≥12 pairs/h
-
Wafer loadCassette
-
Maximum pressure100kN
-
Sputtering target≥2, rotatable
-
Alignment accuracy≤±50μm@edge alignment;≤±2μm@mark alignment
-
LayoutCluster tool
