Equipment Features
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- Dual High-Precision Alignment Modes
- Supports Face-to-Face and infrared penetration alignment to meet diverse process requirements.
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- Industry-Leading Bonding Accuracy
- Face-to-Face: Alignment accuracy ≤±30 nm, bonding accuracy ≤±200 nm. Infrared Penetration: Alignment accuracy ≤±30 nm, bonding accuracy ≤±100 nm.
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- Precise Bond Wave Propagation Control
- Utilizes optimized zoned electrostatic chucks (ESC) with independent pressure adjustment and programmable bond wave propagation to handle complex wafer deformation.
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- Intelligent Overlay Compensation
- Performs high-throughput full-area overlay inspection post-bonding. Results are fed back to the bonding module for automatic overlay compensation.
Specifications and Parameters
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ltemsSpecification
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Wafer size6、8、12 inch
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Wafer loadCassette、SMIF、Foup Optional
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Bonding accuracy±0.5μm; ±0.2μm; ±0.1μm
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Bonding strength≥2.0J/㎡ (after annealing)
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Capacity≥12 bond/h
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Multi-module integratedPre-align, plasma activation, clean,align bond,accuracy inspection,defect detection,debonding
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Chemical cleanOptional
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MicroenvironmentFFU control, capable of achieving ISO Class 1
