Features
-
- Dual High-precision Alignment Modes
- Supports Face-to-face and infrared penetration alignment to meet diverse process requirements.
-
- Industry-leading Bonding Accuracy
- Face-to-face: Alignment accuracy ≤±30 nm, bonding accuracy ≤±200 nm. Infrared Penetration: Alignment accuracy ≤±30 nm, bonding accuracy ≤±100 nm.
-
- Precise Bond Wave Propagation Control
- Incorporates an optimized zonal vacuum chuck with independently adjustable pressure control for each partition, enabling programmable bonding wave propagation to accommodate complex wafer warpage.
-
- Intelligent Overlay Compensation
- Performs high-throughput full-area overlay inspection after bonding. Results are fed back to the bonding module for automatic overlay compensation.
Specifications
-
ltemsSpecification
-
Wafer size6,8,12 inch
-
Wafer loadCassette, SMIF, Foup Optional
-
Bonding accuracy±0.5μm; ±0.2μm; ±0.1μm
-
Bonding strength≥2.0J/㎡ (after annealing)
-
Capacity≥12 bond/h
-
Multi-module integratedPre-align, plasma activation, clean,align bond,accuracy inspection,defect detection,debonding
-
Chemical cleanOptional
-
Internal cleanlinessFFU control, ISO Class 1
