Equipment Features
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- Smart Full Automation
- Seamless CST IN/OUT operation with industry-leading process stability；
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- Modular Efficiency-Enhancing Design
- Integrated deposition chamber & in-situ activation for maximum productivity in minimal footprint;
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- Precision-Align Technology
- Ultra-compact alignment system with advanced optical integration;
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- Universal Adaptability
- Customize bonding interlayers instantly with quick-change targets；
Specifications and Parameters
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ltemsSpecification
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Wafer size2-12 inch
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Bondable materialsSi, LT/LN, Sapphire, InP, SiC, GaAs, GaN, as well as metals, glass, etc.
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Capacity≥6 pairs/h
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Wafer loadCassette
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Maximum pressure100kN
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Dedicated sputter deposition chamberoptional
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Quantity of targets≥2, rotatable
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Alignment method & accuracy≤±50μm@edge alignment;≤±2μm@mark alignment
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Bond strength≥2.0J/m² @Room temperature (Si- Si)
