Equipment Features
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- High-Speed Precision Alignment
- Face-to-Face alignment with accuracy ≤±200 nm; metal/eutectic bonding accuracy ≤±2 μm.
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- Multi-Material Compatibility
- Supports metal bonding, eutectic bonding, anodic bonding, and adhesive thermocompression bonding.
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- Hydrogen Radical Activation Support
- Hydrogen radicals enable low-temperature reduction (at 180°C) for metal surfaces (e.g., Cu), reducing bonding temperature and enhancing quality.
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- Hydrogen Radical Activation Support
- Hydrogen radicals enable low-temperature reduction (at 180°C) for metal surfaces (e.g., Cu), reducing bonding temperature and enhancing quality.
Specifications and Parameters
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ltemsSpecification
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Wafer size6、8、12inch
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Bondable materialsSi, Cu, Au, Au-Sn, Al-Ge, etc.
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Maximum temp.550℃
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Maximum pressure100kN，accuracy ≤±1%
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Heating rate30℃/min
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Temp. uniformity±1.2% or ±2℃，take the larger value
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pressure uniformity±3% or ±40N，take the larger value
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Anodic voltage/current≤2kV，≤100mA
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Post-bonding accuracy≤5μm，≤2μm
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Wafer loadCassette、SMIF、Foup Optional
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Bonding atmosphereVaccum, Formic acid, Inert gas(optional)
