Equipment Features
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- Multi-Material Compatibility
- Supports diverse substrates (silicon, glass, compound semiconductors, etc.) and adhesives (wax, polymers, temporary bonding adhesives, etc.).
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- Superior Post-Bonding TTV Performance
- Coating thickness uniformity ≤5%, bonding pressure uniformity ≤3%, temperature uniformity ≤1.2%, ensuring post-bonding TTV ≤3 μm.
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- Controlled Edge Bonding Quality
- Precise edge bead removal and high-accuracy bonding pressure control ensure strong edge bonding without adhesive overflow.
Specifications and Parameters
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ltemsSpecification
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Wafer size4、6、8、12inch
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Max. temperature350℃
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Maximum pressure20kN，accuracy ≤±1%
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Max. Heating rate20℃/min
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Temperature uniformity≤±1.5%
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Alignment accuracy≤±100μm
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TTV after bonding≤3μm
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Multi-module integratedPre-align, coating, baking, bond,detection
