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Group News2024-08-28
iSABers Leads Innovation: Major Breakthrough in High-Quality Wafer-Level Silicon Carbide on Insulator (SiCOI) Preparation
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Recently, iSABers, a leading Chinese enterprise in semiconductor material heterogeneous integration technology, announced a significant breakthrough in the preparation of silicon carbide on insulator (SiCOI) materials, successfully achieving mass production of high-quality wafer-level SiCOI (6-inch, SiC film thickness 1μm±100nm). This achievement not only marks a new height in iSABers’ R&D capabilities and technological innovation in semiconductor materials but also injects strong momentum into the development of China’s and the global semiconductor industry.

As a semiconductor composite material with superior properties, SiCOI combines the high thermal conductivity and high breakdown voltage of silicon carbide (SiC) with the excellent electrical isolation of insulators. It is widely used in high-tech fields such as integrated photonics, quantum optics, and power devices. However, preparing high-quality SiCOI has long been a challenging task, requiring solutions to technical hurdles in wafer bonding, micro-nano processing, and other areas. Previous industry efforts were mainly limited to small-scale sample preparation.



Leveraging its deep expertise in semiconductor materials and a spirit of continuous innovation, iSABers successfully overcame these technical challenges. Through optimizing wafer bonding quality and refining micro-nano processing techniques, the company’s researchers ensured the high purity, uniformity, and performance of SiCOI materials, laying a solid foundation for subsequent device manufacturing and performance enhancement.

This breakthrough in high-quality wafer-level SiCOI preparation not only meets the urgent market demand for high-performance semiconductor materials but also provides strong support for the independent and controllable development of China’s semiconductor material industry. With the widespread application of SiCOI in integrated photonic devices, quantum light sources, and high-power electronic devices, iSABers’ technological achievement will strongly drive the rapid development and transformation of related industries in China.

Looking ahead, iSABers will continue to uphold its innovation-driven development philosophy, deepen its focus on semiconductor materials, and continuously introduce core technologies and products with independent intellectual property rights. The company will further strengthen cooperation and exchanges with domestic and international research institutions and enterprises, fostering integrated innovation to break technological boundaries. By doing so, iSABers aims to jointly promote the sustainable and healthy development of the semiconductor material industry and contribute more Chinese wisdom and strength to global technological progress and industrial upgrading.

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