Compared to 6-inch SiC wafers, 8-inch SiC wafers offer nearly double the usable area, increasing chip yield by 80-90%. This upgrade to 8-inch SiC wafers will bring significant benefits to automotive and industrial customers, making the transition to 8-inch technology a recognized industry trend. However, SiC crystal growth faces bottlenecks such as low yield rates and long growth cycles, which hinder effective cost reduction. Advanced SiC bonded substrate technology addresses this by integrating high-quality and low-quality SiC substrates through bonding, efficiently utilizing low-quality growth substrates. Combined with crystal growth advancements, this technology significantly reduces SiC material costs and transforms excess traditional productivity into new quality productivity.

Recently, through technological innovation, iSABers has made significant progress in SiC bonded substrate R&D, becoming the first in China to successfully prepare 8-inch SiC bonded substrates. This achievement further consolidates iSABers’ leading position in the field and is expected to accelerate the mass production of 8-inch SiC substrates, providing more competitive pricing for industrial customers.

iSABers Group is one of the few global semiconductor companies mastering the full suite of advanced semiconductor substrate bonding integration technologies. Committed to industrializing cutting-edge semiconductor material integration technologies, the company has gained wide recognition from multiple renowned industrial partners and social capital.