Equipment Features
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- High-Throughput Production & Stability
- Cassette automation and 60 kV high-energy ion beam enable efficient batch processing. Proprietary ion source ensures long-term stability with WTW (Wafer-to-Wafer) consistency ≤2 nm.
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- Reduced Film Thickness Range & Roughness
- Optimized beam energy distribution and intelligent dwell functions reduce film thickness range to <1 nm and surface roughness to <0.5 nm.
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- Damage-Free Precision Processing
- Low-current-density mode eliminates charge-induced damage while maintaining high etch efficiency. No photoresist hardening/residue, with significantly reduced wafer breakage.
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- Unique Process Flexibility
- Exclusive oxidation process tailored for SAW (Surface Acoustic Wave) device frequency trimming, combined with high-resolution beam spots and wide dynamic range, addresses diverse complex process demands.
Specifications and Parameters
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ltemsSpecification
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Wafer size4-12 inch
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Wafer loadCassette automatic load/unload
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Wafer calibrationAligner
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Removal efficiency800 Å*cm²/s @Si
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Process gasNF3/Ar/SF6/O2/He or other mixed gases
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Beam intensity＞100μA @Ar
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Beam spot sizeFWHM<5mm
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ion energy60kev
