Features
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- Real-time Automated Leveling & Alignment
- Automated leveling between chips and wafers with real-time parallelism monitoring at bonding positions, achievs bonding accuracy up to ±500 nm.
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- Dual Activation Modes
- Independent hydrogen radical and plasma activation chambers. Hydrogen radicals enable low-temperature reduction (at 180°C) on metal surfaces (e.g., Cu).
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- Rapid heating/cooling capability
- Heats from RT to 450°C in ≤2s, and gas-accelerated cools, minimizing thermal mismatch deformation, preventing bump shorting, and improving bonding efficiency.
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- Full-process Inert Atmosphere
- Post-activation transfer and bonding occur entirely in an inert atmosphere to avoid air exposure and oxidation, ensuring higher bonding quality.
Specifications
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ltemsSpecification
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Bonding force range1-3000N
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Bonding force stablility1~50N:±0.5N
51~3000N:±2N -
Wafer size8/12 inch compatible
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Bonder temperatureRT~450℃
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Bonder stability±0.5℃
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Bonder heating rate(RT-450℃)6s@50*50mm; 2s@32*32mm
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Post-bonding accuracy≤±2μm；≤±1μm；≤±500nm
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Activation chamber atmosphereHydrogen radical activation, plasma activation.
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Bond chamber atmosphereInert atmosphere
