Equipment Features
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- Automated Leveling & Alignment
- Automated chip-to-chip leveling and alignment eliminate manual calibration, achieving bonding accuracy ≤±300 nm.
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- Broad Chip Size Compatibility
- Supports chips ranging from 0.3×0.3 mm microchips to 100×100 mm large-array chips.
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- Rapid Thermal Cycling
- Heating from RT to 450°C in ≤2 s, with gas cooling for fast cooldown to minimize thermal mismatch deformation, prevent bump shorting, and enhance efficiency.
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- Hydrogen Radical Activation Support
- Hydrogen radicals enable low-temperature reduction (at 180°C) for metal surfaces (e.g., Cu), reducing bonding temperature and enhancing quality.
Specifications and Parameters
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ltemsSpecification
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Sample sizeUpper：0.3*0.3~50*50mm（Optional 100*100mm）
Lower：2*2~50*50mm（Optional 100*100mm） -
Pressure range2~2000N/3000N
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Pressure stablility±2N
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Post-bonding accuracy≤±1μm；≤±500nm；≤±300nm
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Bonder temperatureRT~450℃
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Bonder stability±0.5℃
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Bonder heating rate(RT-450℃)6s@50*50mm; 2s@32*32mm
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Cooling methodGas cooling
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Chamber atmosphereinert atmosphere，hydrogen radical environment
