Features
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- Dual-Mode Process Integration
- A highly flexible modular design combines C2W and W2W hybrid bonding.
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- 30% Reduction in Investment Cost
- Integrated architecture eliminates redundant modules compared to separately purchasing C2W and W2W systems.
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- 60% Reduction in Footprint
- Compact design minimizes floor space compared to separately purchasing C2W and W2W systems.
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- Enhanced Module Utilization
- Plasma activation and cleaning modules can be used for W2W bonding during C2W bonding operations, eliminating idle time and maximizing efficiency.
Specifications
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ltemsSpecification
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Wafer size8，12 inch
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Chip size5*8mm—50*50mm (Infrared transmissive alignment, tape frame loading）
0.5*0.5mm—50*50mm (Inter-chip coaxial alignment, tape frame loading） -
W2W Bonding accuracy≤±100nm
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W2W Maximum bonding force300N
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W2W Pressure control resolution1N
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W2W CapacityWPH≥12
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C2W Bonding accuracy≤±500nm@inter-chip coaxial alignment
≤±200nm@Infrared transmissive alignment -
C2W Maximum bonding force300N
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C2W Pressure control accuracy±0.5N(0-50N)/±2N(50-300N)
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C2W Capacity400~2000UPH（single bonding head）
