Equipment Features
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- Broad Chip Size Compatibility
- Optimized chip pickup technology supports chip thickness down to 35 μm and size ranges from 0.5×0.5 mm to 50×50 mm.
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- Multi-Alignment Mode Compatibility
- Inter-chip coaxial alignment: Bonding accuracy ≤±500 nm. Infrared penetration alignment: Bonding accuracy ≤±200 nm.
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- Optional Bottom-to-Top Bonding
- In addition to top-to-bottom bonding, the system offers bottom-to-top bonding. During bottom-to-top bonding, the wafer bonding face remains downward, eliminating the need for chip flipping and significantly reducing particle contamination risks.
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- Real-Time Overlay Measurement & Feedback Control
- Instant overlay measurement post-bonding, with algorithmic compensation in subsequent bonding steps to ensure consistent accuracy.
Specifications and Parameters
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ltemsSpecification
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TF loadport2
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FOUP loadport2
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Bonding Pressure range1~300N
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Post-bonding accuracy≤±500nm@Inter-Chip Coaxial Alignment
≤±200nm@ Infrared Transmissive Alignment -
Chip size5*8mm—50*50mm（Infrared Transmissive Alignment, Tape Frame loading format）
0.5*0.5mm—50*50mm（inter-chip coaxial alignment, Tape Frame loading format） -
Wafer sizeΦ200mm、Φ300mm
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UPH400~2000UPH（single bonding head）
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ProcessCu/SiO2 hybrid bonding、Cu/SiCN hybrid bonding
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Multi-module integratedActivation, clean, UV debond,Chip pickup,alignment, bonding, and detection
