6寸SiC单晶-单晶复合衬底
- Items
- Specification
- Diameter
- 150±0.2 mm
- Polytype
- 4H
- Dopant
- N-type /Nitrogen
- Resistivity
- 0.015-0.025 ohm·cm
- Face Orientation
- 4.0° off-axis towards <11-20>±0.5°
- Transfer Layer Thickness
- ≥0.5 μm
-
Void (Size: ≥5 mm)
Void (Size: 1 ~ 5 mm)
Void (Size: 0.5~1 mm)
-
0 ea/wafer
≤3 ea/wafer
≤5 ea/wafer
- Front (Si-face) roughness
- Ra≤0.2 nm (5 μm*5 μm）
- Edge Chip,Scratch,Crack（visual inspection）
- None
- TTV
- ≤5 μm
- Warp
- ≤50 μm
- Thickness
- 350±25 μm
8寸SiC单晶-单晶复合衬底
- Items
- Specification
- Diameter
- 200±0.2 mm
- Polytype
- 4H
- Dopant
- N-type /Nitrogen
- Resistivity
- 0.015-0.025 ohm·cm
- Face Orientation
- 4.0° off-axis towards <11-20>±0.5°
- Transfer layer Thickness
- ≥0.5 μm
-
Void (Size: ≥5 mm)
Void (Size: 1-5 mm)
Void (Size: 0.5-1 mm)
-
0 ea/wafer
≤6 ea/wafer
≤10 ea/wafer
- Front (Si-face) roughness
- Ra≤0.2 nm (5 μm*5 μm）
- Edge Chip, Scratch, Crack（visual inspection）
- None
- TTV
- ≤7 μm
- Warp
- ≤50 μm
- Thickness
- 500±25 μm
