SOI衬底
- Items
- Specification
- Diameter
- 150/200 ± 0.2 mm
- SI Orientation
- <100>, <110>, <111>, etc.
- Dopant Type
- P/N
- Device Layer Si Thickness
- ≥2 μm
- Front Roughness
- Ra≤0.2 nm（5 μm*5 μm）
- BOX Layer Thickness
- 0.1 ~ 3 μm
- TTV
- ≤5 μm
- BOW
- -40 ~ 40 μm
- Warp
- ≤50 μm
- Total Thickness
- 380~675/725 ± 25 μm
CSOI
- Items
- Specification
- Diameter
- 150/200 ± 0.2 mm
- SI Orientation
- <100>, <110>, <111>, etc.
- Dopant Type
- P/N
- Device Layer Si Thickness
- ≥ 9 μm
- Edge Chip, Scratch, Crack (visual inspection)
- None
- Front Roughness
- Ra ≤ 0.2 nm (5 μm * 5 μm)
- BOX Layer Thickness
- 0.1 ~ 3 μm
- TTV
- ≤5 μm
- BOW
- -40 ~ 40 μm
- Warp
- ≤50 μm
- Total Thickness
- 380 ~ 675/725 ± 10 μm
