6寸单晶-多晶SiC复合衬底
- Items
- Specification
- Diameter
- 150±0.2 mm
- Pol type
- 4H
- Dopant
- N-type/Nitrogen
- Face Orientation
- 4.0° off-axis towards <11-20>±0.5°
- Transfer Layer Thickness
- ≥0.5 μm
-
Void (Size: ≥5 mm)
Void (Size: 1~5 mm)
Void (Size: 0.5~1 mm)
-
0 ea/wafer
≤3 ea/wafer
≤5 ea/wafer
- Handle Polytype
- 3C
- Resistivity
- ≤0.005 ohm·cm
- Front (Si-face) Roughness
- Ra≤0.2 nm (5 μm*5 μm)
- Edge Chip, Scratch, Crack (visual inspection)
- None
- TTV
- ≤5 μm
- Warp
- ≤50 μm
- Thickness
- 350±25 μm
8寸单晶-多晶SiC复合衬底
- Items
- Specification
- Diameter
- 200±0.2 mm
- Polytype
- 4H
- Dopant
- N-type/Nitrogen
- Face Orientation
- 4.0° off-axis towards <11-20> ±0.5°
- Transfer Layer Thickness
- ≥0.5 μm
-
Void (Size: ≥5 mm)
Void (Size: 1~5 mm)
Void (Size: 0.5~1 mm)
-
0 ea/wafer
≤6 ea/wafer
≤10 ea/wafer
- Handle Polytype
- 3C
- Resistivity
- ≤0.005 ohm·cm
- Front (Si-face) Roughness
- Ra ≤ 0.2 nm (5 μm * 5 μm)
- Edge Chip, Scratch, Crack (visual inspection)
- None
- TTV
- ≤7 μm
- Warp
- ≤50 μm
- Thickness
- 500±25 μm
