6寸半绝缘SiC复合衬底
- Items
- Specification
- Diameter
- 150±0.2 mm
- Poly type
- 4H
- Resistivity
- >E8 ohm·cm
- Transfer layer Thickness
- ≥0.5 μm
-
Void (Size: ≥5 mm)
Void (Size: 1 ~ 5 mm)
Void (Size: 0.5~1 mm)
-
0 ea/wafer
≤3 ea/wafer
≤5 ea/wafer
- Front (Si-face) roughness
- Ra≤0.2 nm (5 μm*5 μm）
- Edge Chip, Scratch, Crack（visual inspection）
- None
- TTV
- ≤5 μm
- Warp
- ≤50 μm
- Thickness
- 500±25 μm
