Ion beam surface activation in ultra-high vacuum enables covalent bonding without annealing, achieving high bonding strength of dissimilar materials, e.g. SiC, Ga₂O₃ and diamond, without thermal stress or interfacial oxides. Applications include engineered substrates, MEMS, thermal management systems, multi-junction solar cells, optical crystals and flexible electronics.
Plasma activating and spin-cleaning create -OH-rich wafer surfaces for pre-bonding at room temperature via van der Waals forces, followed by annealing to achieve high-strength dielectric bonds and Cu-Cu interconnects. Applications include POI/SOI substrates, InP/GaAs-SiO₂ heterointegration, MEMS wafer-level capping, and 3D-stacking CIS, memories and Micro-LEDs.
Wafers are bonded by thermo-compression. Precise pressure and temperature control enables high-quality bonding via metal, eutectic or adhesive interlayer. Integrated anodic bonding allows permanent glass-Si joining. Rapid thermal cycling improves throughput. Applications include metal bonding and glass capping in MEMS , optoelectronics.
Device wafer is temporarily bonded to carrier via adhesive, and then debonded by thermal-slide or laser treatment after backside processing (e.g. thinning). Capable of ≤3μm TTV, high temperature resistance, and ultra-thin device wafer. Applications include advanced packaging (fan-out, 2.5D and 3D), RF/power, MEMS and optoelectronics.
Email: sales@isaber-s.com
Address: No. 22, Binhai Innovation and Entrepreneurship Park, No. 4668 Xinbei Road, Binhai New Area, Tianjin
