设备特点
规格参数
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ItemsSpecification
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Wafer size4, 6, 8, 12 inch
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Wafer loadCassette, SMIF, Foup Optional
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Debonding methodMechanical, Thermal-sliding-off, Laser debond
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Thermal-sliding TemperatureMaximum Temperature 350℃, independent upper/lower plate control
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Thermal-sliding Speed0.1 mm/s~70 mm/s
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Laser Wavelength355nm
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Laser Spot ProfileTop-hat
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Laser Maximum Scanning area320 mm * 320 mm
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Cleaning Chemical Type≥2
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Maximum Spin Speed for Chemical Cleaning3000 rpm
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Plasma CleaningOptional
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Multi-module integratedDebonding, separation, chemical cleaning, plasma cleaning.
















