设备特点
规格参数
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ItemsSpecification
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Wafer size4, 6, 8, 12 inch
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Bondable materialsSOI, POI
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Capacity≥12 pairs/h
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Wafer loadCassette, SMIF, FOUP Optional
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Alignment accuracyMechanical alignment: ≤ ±100 μm; Optical: ≤ ±0.5 μm (Cavity bonding)
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Bond strength≥2.0 J/m² (Si-SiO₂, after annealing)
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Multi-module integratedPre-align, plasma activation, clean, align, bond, detection
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Chemical cleanOptional
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DebondingOptional
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Internal cleanlinessFFU control, ISO Class 3
















