设备特点
规格参数
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ItemsSpecification
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Wafer size≤12 inch, compatible with custom shaped wafer
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Bondable materialsSi, LT/LN, Sapphire, InP, SiC, GaAs, GaN, Diamond, Glass etc.
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Wafer loadManual
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Maximum pressure80 kN
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Surface treatment methodSputtering deposition
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Sputtering targets4, rotatable
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Bonding strengthStandard: Si-Si≥1.5 J/m²@RT
Enhanced: SiO₂-SiO₂≥2 J/m²@RT
















