设备特点
规格参数
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ItemsSpecification
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Wafer size4, 6, 8, 12 inch
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Max. temperature350℃
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Maximum bonding force20 kN
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Max. Heating rate20℃/min
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Temperature uniformity≤±1.5%
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Alignment accuracy≤±100 μm
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TTV after bonding≤3 μm
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Multi-module integratedPre-align, coating, baking, bond, detection
















