设备特点
规格参数
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ItemsSpecification
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Wafer size6, 8, 12 inch
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Bondable materialsSi, Cu, Au, Au-Sn, Al-Ge, etc.
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Maximum temp.550℃
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Maximum bonding force100 kN
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Heating rate30°C/min
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Temp. uniformity±1.5% or ±2°C, which is better
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Pressure uniformity≤±5%
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Anodic voltage/current≤ 2 kV, ≤ 100 mA
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Post-bonding accuracy≤5 μm, ≤2 μm
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Wafer loadCassette, SMIF, FOUP Optional
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Bonding atmosphereVacuum, formic acid, hydrogen radical environment, inert gas (optional)
