6寸SiC单晶-单晶复合衬底
-
ItemsSpecification
-
Diameter150±0.2mm
-
Poly type4H
-
Dopantn-type /Nitrogen
-
Resistivity0.015-0.025ohm·cm
-
Face Orientation4.0° off-axis towards <11-20>±0.5°
-
Transfer layer Thickness≥0.5μm
-
Void(Size: ≥5mm)
Void(Size: 1 ~ 5mm)
Void(Size: 0.5~1mm)
0 ea/wafer
≤6ea/wafer
≤10ea/wafer
-
Front (Si-face) roughnessRa≤0.2nm(5μm*5μm）
-
Edge Chip,Scratch,Crack （visual inspection）None
-
TTV≤7μm
-
Warp≤50μm
-
Thickness500±25μm
