From December 11 to 12, the "2024 HangjiaShuo Third-Generation Semiconductor Mid-Year Conference · Silicon Carbide & Gallium Nitride Industry Summit and Jiguang Award (Aurora Award) Ceremony," organized by HangjiaShuo, was grandly held in Shenzhen. iSABers was invited to participate and won the "Annual Enterprise – Third-Generation Semiconductor Investment Value Award".

As the annual top-tier event in the silicon carbide (SiC) and gallium nitride (GaN) industries, the HangjiaShuo Third-Generation Semiconductor Annual Conference has always been committed to showcasing the latest hotspots and trends in SiC and GaN fields, building a high-quality platform for in-depth exchanges and extensive cooperation within the industry.

As a pioneering enterprise in China’s semiconductor sector, Mr. Liu Fuchao, Deputy General Manager of iSABers, was invited to attend and participated in the Roundtable Forum: Process and Challenges of 8-inch Substrate & Epitaxy Mass Production. He engaged in profound and insightful discussions with industry experts on critical technical challenges in large-scale mass production of 8-inch SiC, including materials, technology, processes, and equipment, collectively envisioning the industry’s future.

(Participate in roundtable forum discussion)

Winning the "Annual Enterprise – Third-Generation Semiconductor Investment Value Award" not only recognizes iSABers’ past achievements but also serves as a spur and inspiration for the future. With unwavering and determination, iSABers will continue to collaborate with peers to create a more brilliant tomorrow for the global semiconductor industry.