In order to strengthen breakthroughs in semiconductor materials and device technology and promote the leapfrog development of domestic semiconductor technology, on May 19, 2023, the 7th World Intelligence Conference Parallel Forum - China Information and Technology Innovation Industry Development Summit Semiconductor Materials and Device Integration Technology Forum, hosted by the Municipal Bureau of Industry and Information Technology and the Binhai New Area Government, and organized by the Tianjin Binhai High tech Zone Management Committee, was grandly opened.

Numerous top experts, professors, and industry experts from the semiconductor industry attended and discussed the development and trends of "semiconductor material and device fusion technology" at this forum, providing new ideas and directions for further promoting the integration of microelectronic systems and the research and development of new semiconductor systems.

The forum was chaired by Liu Xinyu, a researcher from the Institute of Microelectronics, Chinese Academy of Sciences and an expert from the National 01 Special Project and 6G Technology Overall Group.

At the beginning of the forum, Cui Tongxiang, Deputy Director of the Binhai High tech Zone Management Committee in Tianjin, delivered an opening speech, warmly welcoming the guests and introducing the good business environment and high-tech enterprise situation in the high-tech zone.

Professor Keiichi Suga, an outstanding professor at the University of Tokyo and former president of the Japan Electronic Packaging Society, systematically introduced the importance of bonding technology in semiconductor applications, with a focus on the practical application of room temperature bonding technology in the field of semiconductor material fusion, such as the production and manufacturing of POI materials for high-end filters and the preparation of high heat dissipation silicon carbide based gallium oxide thin film materials.

Professor Zou Guisheng, a long-term professor at Tsinghua University and chairman of the Micro Nano Connection Committee of the International Welding Society, introduced various micro nano connection technologies and cutting-edge applications in a clear and concise manner, and looked forward to the application prospects of micro nano connection technology in the field of semiconductor device fusion and integration.

Professor Ma Xiaohua, Vice Dean of the School of Microelectronics at Xi'an University of Electronic Science and Technology and Director of the National Engineering Center for Wide Bandgap Semiconductors, provided a detailed explanation of the performance, advantages, and disadvantages of gallium oxide, an ultra wide bandgap semiconductor material. He systematically reviewed the progress of gallium oxide devices internationally and highlighted the latest progress in effectively improving the heat dissipation problem of gallium oxide devices through material fusion technology at the School of Microelectronics at Xi'an University of Electronic Science and Technology.

Researcher Wang Xinhua, Director of the High Frequency and High Voltage Center at the Institute of Microelectronics, Chinese Academy of Sciences, provided an in-depth explanation of the difficulties and scientific connotations of semiconductor material bonding technology in the report "Wide Bandgap Semiconductor Heterofusion". He systematically summarized the cutting-edge progress of gallium nitride and diamond heterofusion, and emphasized the latest cooperation progress in the field of gallium nitride and diamond heterofusion at the Institute of Microelectronics, Chinese Academy of Sciences.

Researcher Wang Xinhua, Director of the High Frequency and High Voltage Center at the Institute of Microelectronics, Chinese Academy of Sciences

Dr. Mu Fengwen, Chairman and General Manager of Qinghe Jingyuan, provided a detailed introduction and specific disclosure of the advanced semiconductor material bonding integration technology mastered by the company, which aroused strong interest and lively discussion among the attending guests. It is reported that semiconductor material bonding integration technology is one of the most advanced wafer level heterogeneous integration technologies, which can effectively solve the problems of limited performance, high cost, and low yield of single semiconductor materials. At present, Qinghe Jingyuan Company's bonded integrated substrate products have completed customer verification and formed bulk orders, which have been widely recognized by the capital market and downstream customers. The company will further expand production capacity and reduce costs based on its leading technological advantages and mature mass production capabilities to meet the growing product demands of downstream customers.

The "Semiconductor Materials and Device Fusion Technology Forum" is an influential technology forum in the industry. This technology forum discussed the future development trends of the semiconductor industry and also promoted and showcased the leading technologies in the semiconductor industry.