设备特点
规格参数
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ItemsSpecification
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Wafer size4, 6, 8, 12 inch
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Wafer loadCassette/Foup (optional)
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Wafer calibrationAligner
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Removal rate20 keV: ≥70 Å*cm²/s @ SiO₂
60 keV: ≥400 Å*cm²/s @ SiO₂ -
Process gasNF₃/N₂/Ar/O₂/SF₆ (optional)
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Beam intensity＞100μA @Ar
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Beam spot sizeFWHM: 5-10 mm (adjustable)
