设备特点
规格参数
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ItemsSpecification
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Wafer size2-12 inch and irregular shapes
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Wafer loadManual
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TransmissionManual/Customized tooling
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Removal rate20 keV: ≥70 Å*cm²/s @ SiO₂
60 keV: ≥400 Å*cm²/s @ SiO₂ -
Process gasesAr/SF₆/O₂/N₂ or other mixed gas
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Beam intensity＞100μA @Ar
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Beam spot sizeFWHM: 5-10 mm (adjustable)
