设备特点
规格参数
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ItemsSpecification
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Bonding force range and stabilityOption 1: -30-500 N (0.25 N or 1%)
Option 2: 10-3000 N (±2 N) -
Chip size0.4*0.4-32*32/0.4*0.4-50*50/1*1-70*70 mm
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C2S type lower wafer size10*10 mm-120*300 mm
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C2W type lower wafer size8, 12 inch
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Bonder temperatureRT~450℃
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Bonder stability±0.5℃
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Bonder heating rate (RT-450 ℃)2.2s @ 32*32 mm
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Post-bonding accuracy≤±2 μm; ≤±1 μm; ≤±500 nm
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Activation chamber atmosphereHydrogen radical activation, plasma activation.
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Bond chamber atmosphereInert atmosphere
