设备特点
规格参数
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ItemsSpecification
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Wafer size8, 12 inch
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Chip size5*8 mm—32*32 mm
1*1 mm—32*32 mm -
W2W Bonding accuracy≤±100 nm
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W2W Maximum bonding force5N
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W2W Capacity≥12 pairs/h
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C2W Bonding accuracy≤±500 nm @ inter-chip coaxial alignment
≤±200 nm@ Infrared transmissive alignment -
C2W Maximum bonding force30N
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C2W CapacitySingle bonding head: >800@200 nm@3σ
Single bonding head: >400@50 nm@3σ -
Pressure control accuracy±0.5N
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Pressure control resolution±0.1N
















